Static and Dynamic Characterization of 1200 V SiC MOSFETs at Room and Cryogenic Temperatures.

Mahmoud Mehrabankhomartash, Shiyuan Yin, Alfonso J. Cruz, Lukas Graber, Maryam Saeedifard, Simon Evans, Florian Kapaun, Ivan Revel, Gerhard Steiner, Ludovic Ybanez, Chanyeop Park

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