Three-Independent-Gate Reconfigurable Transistors in 22 nm FDSOI for in-Sensor Time-Domain Mixed-Signal Processing.

Juan P. Martinez, Yuxuan He, Giulio Galderisi, Roberta Grasso, Marrit Jen Hong Li, Junyan Qian, Eugenio Cantatore, Sandro Carrara, Thomas Mikolajick, Jens Trommer

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