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Enhance the AlGaN/GaN HEMTs Device Breakdown Voltage by Implementing Field Plate: Simulation Study.

Naeemul Islam, Mohamed Fauzi Packeer Mohamed, Muhammad Firdaus Akbar Jalaludin Khan, Nor Azlin Ghazali, Hiroshi Kawarada, Mohd Syamsul, Alhan Farhanah Abd Rahim, Asrulnizam Abd Manaf

Year2023
ProceedingsRoViSP

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