Enhance the AlGaN/GaN HEMTs Device Breakdown Voltage by Implementing Field Plate: Simulation Study.
Naeemul Islam, Mohamed Fauzi Packeer Mohamed, Muhammad Firdaus Akbar Jalaludin Khan, Nor Azlin Ghazali, Hiroshi Kawarada, Mohd Syamsul, Alhan Farhanah Abd Rahim, Asrulnizam Abd Manaf
Browse the full RoVISP paper archive.