Mateo Rendn
Publication record assembled from the DBLP archive of ranked conferences.
Papers indexed
2
Venues
1
Active years
2024–2025
Best venue rank
National
Where they publish
Papers
2 indexed papers, newest first.
| Year | Venue | Title | Authors |
|---|---|---|---|
| 2025 | VTS | Gate Leakage Current Integration-Based Dielectric Breakdown Monitor in a 12nm FinFET Process. | Mateo Rendn, Ian Hill, Andr Ivanov |
| 2024 | VTS | Enhanced Wear-Out Sensor Design in a 12nm Process for Separable Stress Regime Monitoring. | Ian Hill, Mateo Rendn, Andr Ivanov |