N. K. Kranthi
Publication record assembled from the DBLP archive of ranked conferences.
Papers indexed
1
Venues
1
Active years
2015–2015
Best venue rank
National
Where they publish
Papers
1 indexed papers, newest first.
| Year | Venue | Title | Authors |
|---|---|---|---|
| 2015 | VLSID | Recessed MOSFET in 28 nm FDSOI for Better Breakdown Characteristics. | N. K. Kranthi, Radhakrishnan Sithanandam, Rama Komaragiri |