Skip to content

CSDB-eDRAM: A 16Kb Energy-Efficient 4T CSDB Gain Cell eDRAM with over 16.6s Retention Time and 49.23uW/Kb at 4.2K for Cryogenic Computing.

Yuhao Shu, Hongtu Zhang, Hao Sun, Qi Deng, Yajun Ha

VenueCISCAS
Year2023
ProceedingsISCAS

Browse the full ISCAS paper archive.