A 55nm 0.55v 6T SRAM with variation-tolerant dual-tracking word-line under-drive and data-aware write-assist.

Yi-Wei Lin, Hao-I Yang, Geng-Cing Lin, Chi-Shin Chang, Ching-Te Chuang, Wei Hwang, Chia-Cheng Chen, Willis Shih, Huan-Shun Huang

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