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Paper
Implications of Halo Implant Shadowing and Backscattering from Mask Layer Edges on Device Leakage Current in 65nm SRAM.
H. C. Srinivasaiah
Venue
National
VLSID
Year
2012
Proceedings
VLSI Design
DBLP record
conf/vlsid/Srinivasaiah12 ↗
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