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Nabil Badereddine

Publication record assembled from the DBLP archive of ranked conferences.

Papers indexed

12

Venues

6

Active years

2010–2013

Best venue rank

A*

Where they publish

Papers

12 indexed papers, newest first.

YearVenueTitleAuthors
2013DATETest solution for data retention faults in low-power SRAMs.Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri, Arnaud Virazel, Nabil Badereddine
2013ETSAnalyzing resistive-open defects in SRAM core-cell under the effect of process variability.Elena I. Vatajelu, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri, Arnaud Virazel, Nabil Badereddine
2013ITCOn the reuse of read and write assist circuits to improve test efficiency in low-power SRAMs.Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri, Arnaud Virazel, Nabil Badereddine
2013VTSA built-in scheme for testing and repairing voltage regulators of low-power srams.Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri, Arnaud Virazel, Nabil Badereddine
2012ETSDefect analysis in power mode control logic of low-power SRAMs.Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri, Arnaud Virazel, Nabil Badereddine
2012ITCLow-power SRAMs power mode control logic: Failure analysis and test solutions.Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri, Arnaud Virazel, Nabil Badereddine
2011DDECSOptimized march test flow for detecting memory faults in SRAM devices under bit line coupling.Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine
2011ITCOn using address scrambling to implement defect tolerance in SRAMs.Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine
2010DACA statistical simulation method for reliability analysis of SRAM core-cells.Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine
2010ETSAnalysis of resistive-bridging defects in SRAM core-cells: A comparative study from 90nm down to 40nm technology nodes.Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine
2010ETSSetting test conditions for improving SRAM reliability.Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine
2010VTSDetecting NBTI induced failures in SRAM core-cells.Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine