New reliability mechanisms in memory design for sub-22nm technologies.

Nivard Aymerich, A. Asenov, Andrew R. Brown, Ramon Canal, Binjie Cheng, Joan Figueras, Antonio Gonzlez, Enric Herrero, S. Markov, Miguel Miranda, Peyman Pouyan, Tanaus Ramrez, Antonio Rubio, Elena I. Vatajelu, Xavier Vera, Xingsheng Wang, Paul Zuber

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