Testing for aging in advanced SRAM: From front end of the line transistors to back end of the line interconnects.

Zhe Zhang, Mahta Mayahinia, Christian Weis, Norbert Wehn, Mehdi B. Tahoori, Sani R. Nassif, Grigor Tshagharyan, Gurgen Harutyunyan, Yervant Zorian

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